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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > APTGT50DH120T3G
Microsemi Corporation

APTGT50DH120T3G

Manufacturer Part Number APTGT50DH120T3G
Manufacturer Microsemi Corporation
Detailed Description IGBT MODULE 1200V 75A 277W SP3
Package SP3
In Stock 5079 pcs
Data sheet Mult Devices 01/Nov/2017Microchip CA Prop65Microchip REACHMicrochip RoHS
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 50A
Supplier Device Package SP3
Series -
Power - Max 277 W
Package / Case SP3
Package Bulk
Operating Temperature -40°C ~ 150°C (TJ)
Product Attribute Attribute Value
NTC Thermistor Yes
Mounting Type Chassis Mount
Input Capacitance (Cies) @ Vce 3.6 nF @ 25 V
Input Standard
IGBT Type Trench Field Stop
Current - Collector Cutoff (Max) 250 µA
Current - Collector (Ic) (Max) 75 A
Configuration Asymmetrical Bridge

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APTGT50DH120T3G Datasheet PDF

Data sheet

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