Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 1mA
Vgs (Max)
+25V, -10V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
D3Pak
Series
-
Rds On (Max) @ Id, Vgs
55mOhm @ 40A, 20V
Power Dissipation (Max)
625W (Tc)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package
Bulk
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Surface Mount
Gate Charge (Qg) (Max) @ Vgs
235 nC @ 20 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
20V
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
80A (Tc)
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