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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > MSCSM170HRM11NG
Microchip Technology

MSCSM170HRM11NG

Manufacturer Part Number MSCSM170HRM11NG
Manufacturer Microchip Technology
Detailed Description PM-MOSFET-SIC-SP6C
Package Module
In Stock 126 pcs
Data sheet
Reference Price (In US Dollars)
1
$260.151
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.2V @ 10mA, 2.8V @ 6mA
Technology Silicon Carbide (SiC)
Supplier Device Package -
Series -
Rds On (Max) @ Id, Vgs 11.3mOhm @ 120A, 20V, 16mOhm @ 80A, 20V
Power - Max 1.012kW (Tc), 662W (Tc)
Package / Case Module
Package Bulk
Product Attribute Attribute Value
Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds 13200pF @ 1000V, 6040pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs 712nC @ 20V, 464nC @ 20V
FET Feature Silicon Carbide (SiC)
Drain to Source Voltage (Vdss) 1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 226A (Tc), 163A (Tc)
Configuration 4 N-Channel (Three Level Inverter)

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MSCSM170HRM11NG Datasheet PDF

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