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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > MSC180SMA120S
Microchip Technology

MSC180SMA120S

Manufacturer Part Number MSC180SMA120S
Manufacturer Microchip Technology
Detailed Description MOSFET SIC 1200 V 180 MOHM TO-26
Package TO-268
In Stock 12177 pcs
Data sheet Microchip CA Prop65Microchip REACHMicrochip RoHSTop Marking Changes 22/Feb/2023Additional Fab Site 12/May/2023Label Change 03/Jan/2023
Reference Price (In US Dollars)
1 25 100
$3.528 $3.256 $2.835
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.26V @ 500µA
Vgs (Max) +23V, -10V
Technology SiC (Silicon Carbide Junction Transistor)
Supplier Device Package TO-268
Series -
Rds On (Max) @ Id, Vgs 225mOhm @ 8A, 20V
Power Dissipation (Max) 125W (Tc)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 20 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 20V
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Base Product Number MSC180

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MSC180SMA120S Datasheet PDF

Data sheet