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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > 2N2879
Microchip Technology

2N2879

Manufacturer Part Number 2N2879
Manufacturer Microchip Technology
Detailed Description POWER BJT
Package TO-111
In Stock 351 pcs
Data sheet Microchip CA Prop65Microchip REACHMicrochip RoHS
Reference Price (In US Dollars)
100
$99.108
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 80 V
Vce Saturation (Max) @ Ib, Ic 250mV @ 100µA, 1mA
Transistor Type NPN
Supplier Device Package TO-111
Series -
Power - Max 30 W
Package / Case TO-111-4, Stud
Product Attribute Attribute Value
Package Bulk
Operating Temperature -65°C ~ 200°C (TJ)
Mounting Type Stud Mount
Frequency - Transition -
DC Current Gain (hFE) (Min) @ Ic, Vce -
Current - Collector Cutoff (Max) -
Current - Collector (Ic) (Max) 5 A

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2N2879 Datasheet PDF

Data sheet

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