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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > SCT2H12NYTB
Rohm Semiconductor

SCT2H12NYTB

Manufacturer Part Number SCT2H12NYTB
Manufacturer Rohm Semiconductor
Detailed Description SICFET N-CH 1700V 4A TO268
Package TO-268
In Stock 22909 pcs
Data sheet
Reference Price (In US Dollars)
1 10 100
$2.481 $2.23 $1.827
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 410µA
Vgs (Max) +22V, -6V
Technology SiCFET (Silicon Carbide)
Supplier Device Package TO-268
Series -
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 18V
Power Dissipation (Max) 44W (Tc)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Package Tape & Reel (TR)
Operating Temperature 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 184 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 18 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 18V
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Base Product Number SCT2H12

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SCT2H12NYTB Datasheet PDF

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