Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 3.3mA
Vgs (Max)
+22V, -6V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-220AB
Series
-
Rds On (Max) @ Id, Vgs
156mOhm @ 10A, 18V
Power Dissipation (Max)
165W (Tc)
Package / Case
TO-220-3
Package
Tube
Operating Temperature
175°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
1200 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs
61 nC @ 18 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
18V
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
29A (Tc)
Base Product Number
SCT2120
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