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RSD200N10TL
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 1mA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
CPT3
Series
-
Rds On (Max) @ Id, Vgs
52mOhm @ 10A, 10V
Power Dissipation (Max)
20W (Tc)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Package
Tape & Reel (TR)
Operating Temperature
150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs
48.5 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
20A (Ta)
Base Product Number
RSD200
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RSD200N10TL Datasheet PDF
Data sheet
Datasheet File Browse
