RS1E180BNTB
Reference Price (In US Dollars)
1
10
100
500
1000
$0.237
$0.204
$0.152
$0.12
$0.092
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 1mA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
CPT3
Series
-
Rds On (Max) @ Id, Vgs
4.9mOhm @ 18A, 10V
Power Dissipation (Max)
3W (Ta), 25W (Tc)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Package
Tape & Reel (TR)
Operating Temperature
150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
2400 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
46 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
60A (Tc)
Base Product Number
RS1E
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RS1E180BNTB Datasheet PDF
Data sheet
Datasheet File Browse
