Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
2.5V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
HUML2020L8
Series
-
Rds On (Max) @ Id, Vgs
11.3mOhm @ 11A, 10V
Power Dissipation (Max)
2W (Ta)
Package / Case
8-PowerUDFN
Package
Tape & Reel (TR)
Operating Temperature
150°C (TJ)
Product Attribute
Attribute Value
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
504 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs
7.4 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
11A (Ta)
Base Product Number
RF4E110
Recommended Products
RF4P060BGTCRNCH 100V 6A, HUML2020L8, POWER MRohm Semiconductor
