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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMH4T2R
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EMH4T2R

Manufacturer Part Number EMH4T2R
Manufacturer Rohm Semiconductor
Detailed Description TRANS 2NPN PREBIAS 0.15W EMT6
Package EMT6
In Stock 1091641 pcs
Data sheet Transistor, MOSFET FlammabilityTransistor Whisker InfoTransistor, MOSFET Level 1 MSL
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.139 $0.114 $0.078 $0.058 $0.044 $0.04
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA
Transistor Type 2 NPN - Pre-Biased (Dual)
Supplier Device Package EMT6
Series -
Resistor - Emitter Base (R2) -
Resistor - Base (R1) 10kOhms
Power - Max 150mW
Product Attribute Attribute Value
Package / Case SOT-563, SOT-666
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 5V
Current - Collector Cutoff (Max) 500nA (ICBO)
Current - Collector (Ic) (Max) 100mA
Base Product Number EMH4T2

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EMH4T2R Datasheet PDF

Data sheet

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