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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Arrays, Pre-Biased > EMB10T2R
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EMB10T2R

Manufacturer Part Number EMB10T2R
Manufacturer Rohm Semiconductor
Detailed Description TRANS 2PNP PREBIAS 0.15W EMT6
Package EMT6
In Stock 910951 pcs
Data sheet Transistor, MOSFET FlammabilityTransistor Whisker InfoTransistor, MOSFET Level 1 MSL
Reference Price (In US Dollars)
8000 16000 24000
$0.042 $0.039 $0.038
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type 2 PNP - Pre-Biased (Dual)
Supplier Device Package EMT6
Series -
Resistor - Emitter Base (R2) 47kOhms
Resistor - Base (R1) 2.2kOhms
Power - Max 150mW
Product Attribute Attribute Value
Package / Case SOT-563, SOT-666
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100mA
Base Product Number EMB10

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EMB10T2R Datasheet PDF

Data sheet

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