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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > DTC123JMT2L
Rohm Semiconductor

DTC123JMT2L

Manufacturer Part Number DTC123JMT2L
Manufacturer Rohm Semiconductor
Detailed Description TRANS PREBIAS NPN 150MW VMT3
Package VMT3
In Stock 1931587 pcs
Data sheet Transistor, MOSFET FlammabilityTransistor Whisker InfoTransistor, MOSFET Level 1 MSL
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$0.119 $0.087 $0.049 $0.033 $0.025 $0.022
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Transistor Type NPN - Pre-Biased
Supplier Device Package VMT3
Series -
Resistor - Emitter Base (R2) 47 kOhms
Resistor - Base (R1) 2.2 kOhms
Power - Max 150 mW
Product Attribute Attribute Value
Package / Case SOT-723
Package Tape & Reel (TR)
Mounting Type Surface Mount
Frequency - Transition 250 MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 10mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 100 mA
Base Product Number DTC123

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DTC123JMT2L Datasheet PDF

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