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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > BSM180C12P2E202
Rohm Semiconductor

BSM180C12P2E202

Manufacturer Part Number BSM180C12P2E202
Manufacturer Rohm Semiconductor
Detailed Description SICFET N-CH 1200V 204A MODULE
Package Module
In Stock 170 pcs
Data sheet
Reference Price (In US Dollars)
1
$258.864
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 35.2mA
Vgs (Max) +22V, -6V
Technology SiCFET (Silicon Carbide)
Supplier Device Package Module
Series -
Rds On (Max) @ Id, Vgs -
Power Dissipation (Max) 1360W (Tc)
Package / Case Module
Package Tray
Product Attribute Attribute Value
Operating Temperature 175°C (TJ)
Mounting Type Chassis Mount
Input Capacitance (Ciss) (Max) @ Vds 20000 pF @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) -
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 204A (Tc)
Base Product Number BSM180

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BSM180C12P2E202 Datasheet PDF