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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > BSM120D12P2C005
Rohm Semiconductor

BSM120D12P2C005

Manufacturer Part Number BSM120D12P2C005
Manufacturer Rohm Semiconductor
Detailed Description MOSFET 2N-CH 1200V 120A MODULE
Package Module
In Stock 201 pcs
Data sheet
Reference Price (In US Dollars)
1
$163.455
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.7V @ 22mA
Technology Silicon Carbide (SiC)
Supplier Device Package Module
Series -
Rds On (Max) @ Id, Vgs -
Power - Max 780W
Package / Case Module
Package Bulk
Product Attribute Attribute Value
Operating Temperature -40°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 10V
Gate Charge (Qg) (Max) @ Vgs -
FET Feature -
Drain to Source Voltage (Vdss) 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Configuration 2 N-Channel (Half Bridge)
Base Product Number BSM120

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BSM120D12P2C005 Datasheet PDF