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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Modules > MII200-12A4
IXYS

MII200-12A4

Manufacturer Part Number MII200-12A4
Manufacturer IXYS
Detailed Description IGBT MOD 1200V 270A 1130W Y3DCB
Package Y3-DCB
In Stock 4958 pcs
Data sheet M(II,ID,DI)200-12A4
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 1200 V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 150A
Supplier Device Package Y3-DCB
Series -
Power - Max 1130 W
Package / Case Y3-DCB
Package Box
Operating Temperature 150°C (TJ)
NTC Thermistor No
Product Attribute Attribute Value
Mounting Type Chassis Mount
Input Capacitance (Cies) @ Vce 11 nF @ 25 V
Input Standard
IGBT Type NPT
Current - Collector Cutoff (Max) 10 mA
Current - Collector (Ic) (Max) 270 A
Configuration Half Bridge
Base Product Number MII200

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MII200-12A4 Datasheet PDF

Data sheet