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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > IXYQ30N65B3D1
IXYS

IXYQ30N65B3D1

Manufacturer Part Number IXYQ30N65B3D1
Manufacturer IXYS
Detailed Description DISC IGBT XPT-GENX3 TO-3P (3)
Package TO-3P
In Stock 5293 pcs
Data sheet Multiple Devices Material 23/Jun/2020
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 650 V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 30A
Test Condition 400V, 30A, 10Ohm, 15V
Td (on/off) @ 25°C 17ns/87ns
Switching Energy 830µJ (on), 640µJ (off)
Supplier Device Package TO-3P
Series GenX3™, XPT™
Reverse Recovery Time (trr) 38 ns
Power - Max 270 W
Package / Case TO-3P-3, SC-65-3
Product Attribute Attribute Value
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Input Type Standard
IGBT Type PT
Gate Charge 45 nC
Current - Collector Pulsed (Icm) 160 A
Current - Collector (Ic) (Max) 70 A
Base Product Number IXYQ30

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IXYQ30N65B3D1 Datasheet PDF

Data sheet