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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTY1R4N60P
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IXTY1R4N60P

Manufacturer Part Number IXTY1R4N60P
Manufacturer IXYS
Detailed Description MOSFET N-CH 600V 1.4A TO252
Package TO-252AA
In Stock 3771 pcs
Data sheet IXT(P,U,Y)1R4N60PMult Devices OBS 02/Mar/2018
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5.5V @ 25µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-252AA
Series PolarHV™
Rds On (Max) @ Id, Vgs 9Ohm @ 700mA, 10V
Power Dissipation (Max) 50W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 5.2 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Base Product Number IXTY1

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IXTY1R4N60P Datasheet PDF

Data sheet