IXTT10N100D
Manufacturer Part Number | IXTT10N100D |
---|---|
Manufacturer | IXYS |
Detailed Description | MOSFET N-CH 1000V 10A TO268 |
Package | TO-268AA |
In Stock | 4586 pcs |
Data sheet | IXT(H,T)10N100D |
Reference Price (In US Dollars)
30 |
---|
$7.424 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-268AA |
Series | Depletion |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 10A, 10V |
Power Dissipation (Max) | 400W (Tc) |
Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Package | Tube |
Operating Temperature | -55°C ~ 150°C (TJ) |
Product Attribute | Attribute Value |
---|---|
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 130 nC @ 10 V |
FET Type | N-Channel |
FET Feature | Depletion Mode |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 1000 V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Base Product Number | IXTT10 |
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