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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTQ60N10T
IXYS

IXTQ60N10T

Manufacturer Part Number IXTQ60N10T
Manufacturer IXYS
Detailed Description MOSFET N-CH 100V 60A TO3P
Package TO-3P
In Stock 27067 pcs
Data sheet Multiple Devices Material 23/Jun/2020
Reference Price (In US Dollars)
30
$1.477
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4.5V @ 50µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-3P
Series Trench
Rds On (Max) @ Id, Vgs 18mOhm @ 25A, 10V
Power Dissipation (Max) 176W (Tc)
Package / Case TO-3P-3, SC-65-3
Package Tube
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 49 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Base Product Number IXTQ60

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IXTQ60N10T Datasheet PDF

Data sheet