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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTI10N60P
IXYS

IXTI10N60P

Manufacturer Part Number IXTI10N60P
Manufacturer IXYS
Detailed Description MOSFET N-CH 600V 10A TO262
Package TO-262 (I2PAK)
In Stock 4912 pcs
Data sheet IXT(A,I,P) 10N60P
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5V @ 100µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-262 (I2PAK)
Series PolarHV™
Rds On (Max) @ Id, Vgs 740mOhm @ 5A, 10V
Power Dissipation (Max) 200W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 1610 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Base Product Number IXTI10

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IXTI10N60P Datasheet PDF

Data sheet