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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTH1N200P3
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IXTH1N200P3

Manufacturer Part Number IXTH1N200P3
Manufacturer IXYS
Detailed Description MOSFET N-CH 2000V 1A TO247
Package TO-247 (IXTH)
In Stock 5443 pcs
Data sheet IXTx1N200P3(HV)
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247 (IXTH)
Series Polar P3™
Rds On (Max) @ Id, Vgs 40Ohm @ 500mA, 10V
Power Dissipation (Max) 125W (Tc)
Package / Case TO-247-3
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 23.5 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 2000 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Base Product Number IXTH1

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IXTH1N200P3 Datasheet PDF

Data sheet

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