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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTH10N100D
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IXTH10N100D

Manufacturer Part Number IXTH10N100D
Manufacturer IXYS
Detailed Description MOSFET N-CH 1000V 10A TO247
Package TO-247 (IXTH)
In Stock 4555 pcs
Data sheet IXT(H,T)10N100D
Reference Price (In US Dollars)
30
$7.233
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3.5V @ 250µA
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-247 (IXTH)
Series Depletion
Rds On (Max) @ Id, Vgs 1.4Ohm @ 10A, 10V
Power Dissipation (Max) 400W (Tc)
Package / Case TO-247-3
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
FET Type N-Channel
FET Feature Depletion Mode
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Base Product Number IXTH10

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IXTH10N100D Datasheet PDF

Data sheet

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