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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTA3N100D2HV
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IXTA3N100D2HV

Manufacturer Part Number IXTA3N100D2HV
Manufacturer IXYS
Detailed Description MOSFET N-CH 1000V 3A TO263HV
Package TO-263HV
In Stock 40138 pcs
Data sheet IXTA3N100D2HV
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$2.26 $2.03 $1.663 $1.416 $1.194 $1.134
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all IXYS series electronic components. We have 40138 pieces of IXYS IXTA3N100D2HV in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-263HV
Series Depletion
Rds On (Max) @ Id, Vgs 6Ohm @ 1.5A, 0V
Power Dissipation (Max) 125W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 37.5 nC @ 5 V
FET Type N-Channel
FET Feature Depletion Mode
Drive Voltage (Max Rds On, Min Rds On) 0V
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 3A (Tj)
Base Product Number IXTA3

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IXTA3N100D2HV Datasheet PDF

Data sheet

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