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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXTA1R4N120P
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IXTA1R4N120P

Manufacturer Part Number IXTA1R4N120P
Manufacturer IXYS
Detailed Description MOSFET N-CH 1200V 1.4A TO263
Package TO-263AA
In Stock 39558 pcs
Data sheet IXT(Y,A,P)1R4N120P
Reference Price (In US Dollars)
1 10 100 500 1000 2000
$2.083 $1.869 $1.531 $1.304 $1.1 $1.045
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4.5V @ 100µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-263AA
Series Polar
Rds On (Max) @ Id, Vgs 13Ohm @ 500mA, 10V
Power Dissipation (Max) 86W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 666 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 24.8 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 1.4A (Tc)
Base Product Number IXTA1

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IXTA1R4N120P Datasheet PDF

Data sheet

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