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Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > IXGT32N90B2D1
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IXGT32N90B2D1

Manufacturer Part Number IXGT32N90B2D1
Manufacturer IXYS
Detailed Description IGBT 900V 64A 300W TO268
Package TO-268AA
In Stock 4233 pcs
Data sheet IXG(H,T)32N90B2D1
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 900 V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 32A
Test Condition 720V, 32A, 5Ohm, 15V
Td (on/off) @ 25°C 20ns/260ns
Switching Energy 2.2mJ (off)
Supplier Device Package TO-268AA
Series HiPerFAST™
Reverse Recovery Time (trr) 190 ns
Power - Max 300 W
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Product Attribute Attribute Value
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Type Standard
IGBT Type -
Gate Charge 89 nC
Current - Collector Pulsed (Icm) 200 A
Current - Collector (Ic) (Max) 64 A
Base Product Number IXGT32

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IXGT32N90B2D1 Datasheet PDF

Data sheet

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