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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > IXFT4N100Q
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IXFT4N100Q

Manufacturer Part Number IXFT4N100Q
Manufacturer IXYS
Detailed Description MOSFET N-CH 1000V 4A TO268
Package TO-268AA
In Stock 5276 pcs
Data sheet IXF(H,T)4N100Q
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 5V @ 1.5mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-268AA
Series HiPerFET™
Rds On (Max) @ Id, Vgs 3Ohm @ 2A, 10V
Power Dissipation (Max) 150W (Tc)
Package / Case TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Package Tube
Operating Temperature -55°C ~ 150°C (TJ)
Product Attribute Attribute Value
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 1000 V
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Base Product Number IXFT4

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IXFT4N100Q Datasheet PDF

Data sheet

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