Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3.2V @ 6mA
Vgs (Max)
+20V, -5V
Technology
SiCFET (Silicon Carbide)
Supplier Device Package
TO-247-4
Series
-
Rds On (Max) @ Id, Vgs
65mOhm @ 20A, 20V
Power Dissipation (Max)
344W (Tc)
Package / Case
TO-247-4
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 175°C (TJ)
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
2750 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs
120 nC @ 20 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
20V
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
58A (Tc)
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