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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GT105N10F
Goford Semiconductor

GT105N10F

Manufacturer Part Number GT105N10F
Manufacturer Goford Semiconductor
Detailed Description N100V,RD(MAX)<10.5M@10V,RD(MAX)<
Package TO-220F
In Stock 332145 pcs
Data sheet GT105N10F
Reference Price (In US Dollars)
3000 9000 15000 30000 51000
$0.155 $0.149 $0.143 $0.129 $0.119
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Goford Semiconductor series electronic components. We have 332145 pieces of Goford Semiconductor GT105N10F in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220F
Series -
Rds On (Max) @ Id, Vgs 10.5mOhm @ 11A, 10V
Power Dissipation (Max) 20.8W (Tc)
Package / Case TO-220-3 Full Pack
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Gate Charge (Qg) (Max) @ Vgs 54 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)

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GT105N10F Datasheet PDF

Data sheet

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