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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GT080N10M
Goford Semiconductor

GT080N10M

Manufacturer Part Number GT080N10M
Manufacturer Goford Semiconductor
Detailed Description N100V, 70A,RD<7.5M@10V,VTH1V~3V,
Package TO-263
In Stock 243021 pcs
Data sheet GT080N10M
Reference Price (In US Dollars)
1600 8000 16000 32000 48000
$0.244 $0.234 $0.225 $0.203 $0.188
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Goford Semiconductor series electronic components. We have 243021 pieces of Goford Semiconductor GT080N10M in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 3V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-263
Series -
Rds On (Max) @ Id, Vgs 7.5mOhm @ 20A, 10V
Power Dissipation (Max) 100W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 2125 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)

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GT080N10M Datasheet PDF

Data sheet

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