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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > GT035N10T
Goford Semiconductor

GT035N10T

Manufacturer Part Number GT035N10T
Manufacturer Goford Semiconductor
Detailed Description N100V,190A,RD<3.5M@10V,VTH2.0V~4
Package TO-220
In Stock 42968 pcs
Data sheet
Reference Price (In US Dollars)
50
$0.991
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220
Series -
Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 10V
Power Dissipation (Max) 250W (Tc)
Package / Case TO-220-3
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 6057 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 190A (Tc)

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GT035N10T Datasheet PDF