GC20N65F
Manufacturer Part Number | GC20N65F |
---|---|
Manufacturer | Goford Semiconductor |
Detailed Description | N650V,RD(MAX)<170M@10V,VTH2.5V~4 |
Package | TO-220F |
In Stock | 85143 pcs |
Data sheet | GC20N65F |
Reference Price (In US Dollars)
3000 | 9000 | 15000 | 30000 | 51000 |
---|---|---|---|---|
$0.524 | $0.503 | $0.484 | $0.435 | $0.403 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Vgs (Max) | ±30V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-220F |
Series | - |
Rds On (Max) @ Id, Vgs | 170mOhm @ 10A, 10V |
Power Dissipation (Max) | 34W (Tc) |
Package / Case | TO-220-3 Full Pack |
Package | Tube |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Input Capacitance (Ciss) (Max) @ Vds | 1724 pF @ 100 V |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
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