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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > G800N06H
Goford Semiconductor

G800N06H

Manufacturer Part Number G800N06H
Manufacturer Goford Semiconductor
Detailed Description N60V, 3A,RD<80M@10V,VTH0.7V~1.2V
Package SOT-223
In Stock 2430916 pcs
Data sheet G800N06H
Reference Price (In US Dollars)
2500 15000 30000 50000
$0.024 $0.022 $0.02 $0.019
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1.2V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-223
Series -
Rds On (Max) @ Id, Vgs 80mOhm @ 3A, 10V
Power Dissipation (Max) 1.2W (Tc)
Package / Case TO-261-4, TO-261AA
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 457 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 4.5 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)

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G800N06H Datasheet PDF

Data sheet