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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > G30N02T
Goford Semiconductor

G30N02T

Manufacturer Part Number G30N02T
Manufacturer Goford Semiconductor
Detailed Description N20V,RD(MAX)<13M@4.5V,VTH0.5V~1.
Package TO-220
In Stock 551957 pcs
Data sheet G30N02T
Reference Price (In US Dollars)
3000 9000 15000 30000 51000
$0.078 $0.075 $0.072 $0.065 $0.06
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Goford Semiconductor series electronic components. We have 551957 pieces of Goford Semiconductor G30N02T in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 1.2V @ 250µA
Vgs (Max) ±12V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220
Series -
Rds On (Max) @ Id, Vgs 13mOhm @ 20A, 4.5V
Power Dissipation (Max) 40W (Ta)
Package / Case TO-220-3
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 900 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 30A (Ta)

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G30N02T Datasheet PDF

Data sheet

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