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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > G2K2P10SE
Goford Semiconductor

G2K2P10SE

Manufacturer Part Number G2K2P10SE
Manufacturer Goford Semiconductor
Detailed Description P-100V, 3.5A,RD<200M@-10V,VTH1V~
Package 8-SOP
In Stock 1008132 pcs
Data sheet G2K2P10SE
Reference Price (In US Dollars)
4000 16000 32000 48000
$0.058 $0.054 $0.049 $0.045
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package 8-SOP
Series -
Rds On (Max) @ Id, Vgs 200mOhm @ 3A, 10V
Power Dissipation (Max) 3.1W (Tc)
Package / Case 8-SOIC (0.154", 3.90mm Width)
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 1653 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
FET Type P-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)

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G2K2P10SE Datasheet PDF

Data sheet