G2012
Manufacturer Part Number
G2012
Manufacturer
Goford Semiconductor
Detailed Description
N20V,RD(MAX)<12M@4.5V,RD(MAX)<18
Package
6-DFN (2x2)
In Stock
1356085 pcs
Data sheet
G2012
Reference Price (In US Dollars)
3000
15000
30000
51000
$0.031
$0.029
$0.026
$0.024
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
1V @ 250µA
Vgs (Max)
±10V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
6-DFN (2x2)
Series
-
Rds On (Max) @ Id, Vgs
12mOhm @ 5A, 4.5V
Power Dissipation (Max)
1.5W (Tc)
Package / Case
6-WDFN Exposed Pad
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
1255 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs
29 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Drain to Source Voltage (Vdss)
20 V
Current - Continuous Drain (Id) @ 25°C
12A (Tc)
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Data sheet
Datasheet File Browse