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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > G1K3N10G
Goford Semiconductor

G1K3N10G

Manufacturer Part Number G1K3N10G
Manufacturer Goford Semiconductor
Detailed Description N100V, 5A,RD<130M@10V,VTH1V~2V,
Package SOT-89
In Stock 1272882 pcs
Data sheet G1K3N10G
Reference Price (In US Dollars)
2000 8000 14000 30000 50000
$0.042 $0.04 $0.039 $0.035 $0.032
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package SOT-89
Series -
Rds On (Max) @ Id, Vgs 130mOhm @ 5A, 10V
Power Dissipation (Max) 1.5W (Tc)
Package / Case TO-243AA
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 644 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)

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G1K3N10G Datasheet PDF

Data sheet

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