G15N10C
Manufacturer Part Number
G15N10C
Manufacturer
Goford Semiconductor
Detailed Description
N100V,RD(MAX)<110M@10V,RD(MAX)<1
Package
TO-252
In Stock
997207 pcs
Data sheet
G15N10C
Reference Price (In US Dollars)
2500
15000
30000
50000
$0.053
$0.049
$0.044
$0.041
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
3V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-252
Series
-
Rds On (Max) @ Id, Vgs
110mOhm @ 8A, 10V
Power Dissipation (Max)
42W (Tc)
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Package
Tape & Reel (TR)
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Gate Charge (Qg) (Max) @ Vgs
22 nC @ 10 V
FET Type
N-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
15A (Tc)
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Data sheet
Datasheet File Browse
