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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > G110N06K
Goford Semiconductor

G110N06K

Manufacturer Part Number G110N06K
Manufacturer Goford Semiconductor
Detailed Description N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Package TO-252
In Stock 348626 pcs
Data sheet G110N06K
Reference Price (In US Dollars)
2500 15000 30000 50000
$0.135 $0.124 $0.112 $0.104
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Goford Semiconductor series electronic components. We have 348626 pieces of Goford Semiconductor G110N06K in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.5V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-252
Series -
Rds On (Max) @ Id, Vgs 6.4mOhm @ 4A, 10V
Power Dissipation (Max) 160W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Package Tape & Reel (TR)
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 5538 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 113 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 110A (Tc)

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G110N06K Datasheet PDF

Data sheet