G110N06K
Manufacturer Part Number | G110N06K |
---|---|
Manufacturer | Goford Semiconductor |
Detailed Description | N60V,RD(MAX)<6.4M@10V,RD(MAX)<8. |
Package | TO-252 |
In Stock | 348626 pcs |
Data sheet | G110N06K |
Reference Price (In US Dollars)
2500 | 15000 | 30000 | 50000 |
---|---|---|---|
$0.135 | $0.124 | $0.112 | $0.104 |
Delivery Time
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RFQ Email: info@Components-House.net
Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-252 |
Series | - |
Rds On (Max) @ Id, Vgs | 6.4mOhm @ 4A, 10V |
Power Dissipation (Max) | 160W (Tc) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR) |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 5538 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
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