G10N10A
Manufacturer Part Number | G10N10A |
---|---|
Manufacturer | Goford Semiconductor |
Detailed Description | N100V,RD(MAX)130MOHM@10V,TO-252 |
Package | TO-252 |
In Stock | 906495 pcs |
Data sheet |
Reference Price (In US Dollars)
2500 | 15000 | 30000 | 50000 |
---|---|---|---|
$0.047 | $0.044 | $0.04 | $0.037 |
Delivery Time
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Specifications
Product Attribute | Attribute Value |
---|---|
Vgs(th) (Max) @ Id | 3V @ 250µA |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
Supplier Device Package | TO-252 |
Series | - |
Rds On (Max) @ Id, Vgs | 130mOhm @ 2A, 10V |
Power Dissipation (Max) | 28W (Ta) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Package | Tape & Reel (TR) |
Product Attribute | Attribute Value |
---|---|
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V |
Gate Charge (Qg) (Max) @ Vgs | 90 nC @ 10 V |
FET Type | N-Channel |
FET Feature | - |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
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