G080P06T
Manufacturer Part Number
G080P06T
Manufacturer
Goford Semiconductor
Detailed Description
P-60V,-195A,RD(MAX)<7.5M@-10V,VT
Package
TO-220
In Stock
157589 pcs
Data sheet
G080P06T
Reference Price (In US Dollars)
3000
9000
15000
30000
51000
$0.315
$0.303
$0.291
$0.262
$0.243
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
4V @ 250µA
Vgs (Max)
±20V
Technology
MOSFET (Metal Oxide)
Supplier Device Package
TO-220
Series
-
Rds On (Max) @ Id, Vgs
7.5mOhm @ 20A, 10V
Power Dissipation (Max)
294W (Tc)
Package / Case
TO-220-3
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Input Capacitance (Ciss) (Max) @ Vds
15195 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs
186 nC @ 10 V
FET Type
P-Channel
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
10V
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
195A (Tc)
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Data sheet
Datasheet File Browse