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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > 630AT
Goford Semiconductor

630AT

Manufacturer Part Number 630AT
Manufacturer Goford Semiconductor
Detailed Description N200V,RD(MAX)<250M@10V,RD(MAX)<3
Package TO-220
In Stock 5034 pcs
Data sheet 630AT
Reference Price (In US Dollars)
Delivery Time Components-House.com is a Reliable Stocking Distributor of Electronic Parts. We specialize in all Goford Semiconductor series electronic components. We have 5034 pieces of Goford Semiconductor 630AT in stock available now. Request a quote from electronics components distributor at Components-House.com, our sales team will contact you within 24 hours.
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 2.2V @ 250µA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package TO-220
Series -
Rds On (Max) @ Id, Vgs 250mOhm @ 1A, 10V
Power Dissipation (Max) 83W (Tc)
Package / Case TO-220-3
Package Tube
Product Attribute Attribute Value
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 509 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 11.8 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)

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630AT Datasheet PDF

Data sheet

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