Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
Technology
SiC (Silicon Carbide Junction Transistor)
Supplier Device Package
TO-258
Series
-
Rds On (Max) @ Id, Vgs
25mOhm @ 50A
Power Dissipation (Max)
769W (Tc)
Package / Case
TO-258-3, TO-258AA
Package
Bulk
Product Attribute
Attribute Value
Operating Temperature
-55°C ~ 225°C (TJ)
Mounting Type
Through Hole
FET Type
-
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
-
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Base Product Number
GA50JT06
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