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GA20JT12-263
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
Technology
SiC (Silicon Carbide Junction Transistor)
Supplier Device Package
TO-263-7
Series
-
Rds On (Max) @ Id, Vgs
60mOhm @ 20A
Power Dissipation (Max)
282W (Tc)
Package / Case
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Package
Tube
Product Attribute
Attribute Value
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds
3091 pF @ 800 V
FET Type
-
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
45A (Tc)
Base Product Number
GA20JT12
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GA20JT12-263 Datasheet PDF
Data sheet
Datasheet File Browse