GA10JT12-247
Reference Price (In US Dollars)
Delivery Time
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Specifications
Product Attribute
Attribute Value
Vgs(th) (Max) @ Id
-
Vgs (Max)
-
Technology
SiC (Silicon Carbide Junction Transistor)
Supplier Device Package
TO-247AB
Series
-
Rds On (Max) @ Id, Vgs
140mOhm @ 10A
Power Dissipation (Max)
170W (Tc)
Package / Case
TO-247-3
Product Attribute
Attribute Value
Package
Tube
Operating Temperature
175°C (TJ)
Mounting Type
Through Hole
FET Type
-
FET Feature
-
Drive Voltage (Max Rds On, Min Rds On)
-
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
10A (Tc)
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GA10JT12-247 Datasheet PDF
Data sheet
Datasheet File Browse