Delivery Time
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Specifications
Product Attribute
Attribute Value
Voltage - Forward (Vf) (Max) @ If
1.34 V @ 10 A
Voltage - DC Reverse (Vr) (Max)
650 V
Technology
SiC (Silicon Carbide) Schottky
Supplier Device Package
TO-257
Speed
No Recovery Time > 500mA (Io)
Series
-
Reverse Recovery Time (trr)
0 ns
Package / Case
TO-257-3
Product Attribute
Attribute Value
Package
Tube
Operating Temperature - Junction
-55°C ~ 250°C
Mounting Type
Through Hole
Current - Reverse Leakage @ Vr
5 µA @ 650 V
Current - Average Rectified (Io)
9.4A
Capacitance @ Vr, F
1107pF @ 1V, 1MHz
Base Product Number
1N8034
Recommended Products
1N8024-GADIODE SIL CARB 1.2KV 750MA TO257GeneSiC Semiconductor
