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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > PSMN7R8-120ESQ
NXP USA Inc.

PSMN7R8-120ESQ

Manufacturer Part Number PSMN7R8-120ESQ
Manufacturer NXP USA Inc.
Detailed Description POWER FIELD-EFFECT TRANSISTOR, 7
Package I2PAK
In Stock 106013 pcs
Data sheet
Reference Price (In US Dollars)
278
$0.398
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package I2PAK
Series -
Rds On (Max) @ Id, Vgs 7.9mOhm @ 25A, 10V
Power Dissipation (Max) 349W (Tc)
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Package Bulk
Operating Temperature -55°C ~ 175°C (TJ)
Product Attribute Attribute Value
Mounting Type Through Hole
Input Capacitance (Ciss) (Max) @ Vds 9473 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs 167 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 120 V
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Base Product Number PSMN7R8

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PSMN7R8-120ESQ Datasheet PDF

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