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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single > PHE13009/DG,127
NXP USA Inc.

PHE13009/DG,127

Manufacturer Part Number PHE13009/DG,127
Manufacturer NXP USA Inc.
Detailed Description NOW WEEN - PHE13009 - POWER BIPO
Package TO-220AB
In Stock 288584 pcs
Data sheet
Reference Price (In US Dollars)
937
$0.113
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 400 V
Vce Saturation (Max) @ Ib, Ic 2V @ 1.6A, 8A
Transistor Type NPN
Supplier Device Package TO-220AB
Series -
Power - Max 80 W
Package / Case TO-220-3
Product Attribute Attribute Value
Package Bulk
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Frequency - Transition -
DC Current Gain (hFE) (Min) @ Ic, Vce 8 @ 5A, 5V
Current - Collector Cutoff (Max) 100µA
Current - Collector (Ic) (Max) 12 A

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PHE13009/DG,127 Datasheet PDF

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