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Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single > PHB18NQ10T,118
NXP USA Inc.

PHB18NQ10T,118

Manufacturer Part Number PHB18NQ10T,118
Manufacturer NXP USA Inc.
Detailed Description MOSFET N-CH 100V 18A D2PAK
Package D2PAK
In Stock 234289 pcs
Data sheet
Reference Price (In US Dollars)
671
$0.184
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Specifications

Product Attribute Attribute Value
Vgs(th) (Max) @ Id 4V @ 1mA
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
Supplier Device Package D2PAK
Series TrenchMOS™
Rds On (Max) @ Id, Vgs 90mOhm @ 9A, 10V
Power Dissipation (Max) 79W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Package Bulk
Product Attribute Attribute Value
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Input Capacitance (Ciss) (Max) @ Vds 633 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
FET Type N-Channel
FET Feature -
Drive Voltage (Max Rds On, Min Rds On) 10V
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)

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PHB18NQ10T,118 Datasheet PDF