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Home > Products > Discrete Semiconductor Products > Transistors - Bipolar (BJT) - Single, Pre-Biased > PDTB113ZS,126
NXP Semiconductors / Freescale

PDTB113ZS,126

Manufacturer Part Number PDTB113ZS,126
Manufacturer NXP Semiconductors / Freescale
Detailed Description TRANS PREBIAS PNP 500MW TO92-3
Package TO-92-3
In Stock 5695 pcs
Data sheet PDTB113Z Series
Reference Price (In US Dollars)
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Specifications

Product Attribute Attribute Value
Voltage - Collector Emitter Breakdown (Max) 50V
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Transistor Type PNP - Pre-Biased
Supplier Device Package TO-92-3
Series -
Resistor - Emitter Base (R2) 10 kOhms
Resistor - Base (R1) 1 kOhms
Power - Max 500mW
Packaging Tape & Box (TB)
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Product Attribute Attribute Value
Other Names 934059146126
PDTB113ZS AMO
PDTB113ZS AMO-ND
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50V 500mA 500mW Through Hole TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
Current - Collector Cutoff (Max) 500nA
Current - Collector (Ic) (Max) 500mA
Base Part Number PDTB113

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PDTB113ZS,126 Datasheet PDF

Data sheet

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